Erika Toyoda

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We have systematically investigated the effects of strain on the gate oxide reliability, using biaxially strained Si MOSFETs, to elucidate their physical origins. It was found that the time-dependent dielectric breakdown reliability was significantly improved in strained Si nMOSFETs but was slightly degraded in strained Si pMOSFETs. These observations could(More)
An effective way to reduce supply voltage and resulting power consumption without losing the circuit performance of CMOS is to use CMOS structures using high carrier mobility/velocity. In this paper, our recent approaches in realizing these carrier-transport-enhanced CMOS will be reviewed. First, the basic concept on the choice of channels for increasing on(More)
Strained Si and SiGe tri-gate nanowire (NW) MOSFETs with significantly reduced line-edge roughness and smooth sidewalls were fabricated by a novel anisotropic thermal etching technique in H<sub>2</sub> atmosphere. Effective carrier mobility measurements revealed mobility enhancements for the strained-Si NW n-MOSFETs and the strained-SiGe NW p-MOSFETs by(More)
The strain effects on TDDB and NBTI are systematically investigated using biaxially strained Si MOSFETs and their physical origins are examined. It is found that TDDB reliability of nMOS is significantly improved in strained-Si MOSFETs, while that of pMOS is slightly degraded. These dependences are well explained by the strain-induced modulation of gate(More)
Strained Si-on-insulator NMOSFETs and strained SiGe-on-insulator PMOSFETs were integrated, for the first time, using the local condensation technique. Both P- and NMOSFETs exhibited significant mobility and current drive enhancements. Furthermore, ultrathin-body SOI NMOSFETs and strained Ge-on-Insulator PMOSFETs were also integrated. Over 4 times higher(More)
We propose a novel multi-gate CMOS structure having a high mobility channel with optimal strain configuration, realized by appropriately merging globally-strained substrates with lateral strain relaxation technique. We report successful fabrication and operation of uniaxially-strained SGOI fin and tri-gate pMOSFETs. The improved SCE immunity and the(More)
Novel uniaxially-strained SiGe-on-insulator (SGOI) pMOSFETs are successfully fabricated by utilizing lateral strain relaxation process and the mobility enhancement of 100% is realized in spite of low Ge content (20%). This high mobility enhancement is maintained in high vertical effective fields as well as in short channel devices. As a result, I/sub on/(More)
An ultra-thin body (UTB) Ge-on-insulator (GOI) MISFET is one of the promising candidates for the future devices structure. For fabrication of UTB GOI devices, we have fabricated an ultra-thin GOI layer by oxidizing a SiGe layer grown on an SOI layer, which is called the Ge-condensation technique, However, the GOI devices on substrates fabricated by Ge(More)
Randall's plaque theory is regarded as the most plausible mechanism of urinary stone formation; however, we speculated that urine proteins are necessarily involved in the process of stone formation. We focused on alpha 1-antitrypsin (alpha1-AT), a protein verified to be present in urinary calculi, and which is considered as a protein of inflammation,(More)
Hole mobility of uniaxially strained thin-body SiGe-on-insulator (SGOI) pMOSFETs was directly measured and was compared with that of biaxially strained ones for the first time. The uniaxial stress was induced by lateral strain relaxation in narrow SGOI active areas, which were biaxially strained before isolation. A unique feature of the combination of this(More)