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In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around(More)
An n-type InAs/InAsP heterostructure nanowire field-effect transistor has been fabricated and compared with a homogeneous InAs field-effect transistor. For the same device geometry, by introduction of the heterostructure, the threshold voltage is shifted 4 V, the maximum current on-off ratio is enhanced by a factor of 10,000, and the subthreshold swing is(More)
We report extremely low specific contact resistivity ͑␳ c ͒ nonalloyed Ohmic contacts to n-type In 0.53 Ga 0.47 As, lattice matched to InP. Contacts were formed by oxidizing the semiconductor surface through exposure to ultraviolet-generated ozone, subsequently immersing the wafer in ammonium hydroxide ͑NH 4 OH, 14.8 normality͒, and finally depositing(More)
We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO<sub>2</sub> high-<i>k</i> gate dielectric and a wrap-gate length of 250 nm. The transistor has a(More)
This study presents a novel approach for indirect integration of InAs nanowires on 2'' Si substrates. We have investigated and developed epitaxial growth of InAs nanowires on 2'' Si substrates via the introduction of a thin yet high-quality InAs epitaxial layer grown by metalorganic vapor phase epitaxy. We demonstrate well-aligned nanowire growth including(More)
We examine the feasibility of developing bipolar transistors with current-gain and power-gain cutoff frequencies of 1-3 THz. High bandwidths are obtained by scaling; the critical limits to such scaling are the requirements that the current density increase in proportion to the square of bandwidth and that the metal-semiconductor contact resistivities vary(More)
We describe the implementation of a gated resonant tunneling diode and its application in a wavelet generator. The GaAs-based device is fabricated by embedding a metal gate directly above a double barrier heterostructure with a peak current of 120 kA/cm<sup>2</sup>. The gate is used to modulate the tunneling current via the Schottky depletion around the(More)
The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1-4 and Cho et al., IEEE Int. Devices Meeting 2011, 15.1.1-15.1.4). The continued scaling of the supply voltage of field-effect transistors, such as tunnel field-effect transistors(More)