Erik Bodegom

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We present data for dark current of a back-illuminated CCD over the temperature range of 222 to 291 K. Using an Arrhenius law, we found that the analysis of the data leads to the relation between the prefactor and the apparent activation energy as described by the Meyer-Neldel rule. However, a more detailed analysis shows that the activation energy for the(More)
Let us know how access to this document benefits you. Abstract. A study of dark current in digital imagers in digital single-lens reflex (DSLR) and compact consumer-grade digital cameras is presented. Dark current is shown to vary with temperature, exposure time, and ISO setting. Further, dark current is shown to increase in successive images during a(More)
Let us know how access to this document benefits you. Influence of illumination on dark current in charge-coupled device imagers. J. Abstract. Thermal excitation of electrons is a major source of noise in charge-coupled-device (CCD) imagers. Those electrons are generated even in the absence of light, hence, the name dark current. Dark current is(More)
Let us know how access to this document benefits you.Dark current in an active pixel complementary metal-oxide-semiconductor sensor", J. Abstract. We present an analysis of dark current from a complementary metal–oxide–semiconductor (CMOS) active pixels sensor with global shutter. The presence of two sources of dark current, one within the collection area(More)
Let us know how access to this document benefits you. Abstract. Within a pixel in a digital imager, generally either a charge-coupled device or complementary metal oxide semiconductor device, doping of the semiconductor substrate and application of gate voltages create a region free of mobile carriers called the depletion region. This region fills with(More)
There is a growing need in industrial and scientific research applications for very wide dynamic range, high sensitivity imaging methods. To fill this need, an advanced back-illuminated avalanche photodiode (APD) design is presented based on crystallographically etched (100) epitaxial silicon on R-plane sapphire (SOS), enabling large single photon(More)
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