Eric Kerhervé

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As applications in E-band (60–90 GHz) are gaining increasing commercial interest, a full-band, low-cost and high performance microstrip to rectangular waveguide standard (WR12) transition is desired. The presented design covers a bandwidth from 55 GHz to 95 GHz thanks to smooth impedance transitions. A dielectric tip is machined at the end of the(More)
This paper reports for the first time a power amplifier (PA) based on the recently proposed MASMOS® transistor. This PA complies with the long-term evolution (LTE) power level requirements while offering a high efficiency. The MASMOS® transistor, available in low-cost 180-nm standard CMOS process, provides a higher breakdown voltage compared(More)
This paper reports for the first time a power amplifier (PA) based on the recently proposed MASMOS<sup>&#x00AE;</sup> transistor. This PA complies with the long-term evolution (LTE) power level requirements while offering a high efficiency. The MASMOS<sup>&#x00AE;</sup> transistor, available in low-cost 180-nm standard CMOS process, provides a higher(More)
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