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Two high performance single supply power amplifier IC products have been developed for GSM and DCS applications using true enhancement mode FET technology. At VD=3.2V, under CW conditions, the GSM IC supplies +35.5 dBm output power at 58% PAE and the DCS IC supplies +33.5 dBm at 46% PAE. These ICs have low leakage currents similar to HBT and LDMOS and do(More)
Single supply power amplifiers have become the new paradigm in portable phone handsets due to the recent availability of HBT and pseudo enhancement mode PHEMT technology. We have developed a true enhancement mode heterostructure insulated-gate FET device (HIGFET) which is suitable for use in both digital and analog power amplifiers and in addition to this,(More)
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