Eric Desbonnets

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We present for the first time the RF and linear performance of commercial 200 mm trap-rich HR-SOI wafers. These wafers are fully compatible with the thermal budget of CMOS process. The investigated SOI wafers with a fixed BOX of 400 nm-thick show effective resistivity values higher than 4 kΩ-cm and harmonic distortion levels lower than -81 dBm for a(More)
The increasing demand for wireless data bandwidth and the rapid adoption of LTE and LTE Advanced standards push radio-frequency (RF) IC designers to develop devices with higher levels of integrated RF functions, meeting more and more stringent specification levels. The substrates on which those devices are manufactured play a major role in achieving that(More)
The increasing demand for wireless data bandwidth and the rapid adoption of LTE and LTE Advanced standards push radio-frequency (RF) IC designers to develop devices with higher levels of integrated RF functions, meeting more and more stringent specification levels. The substrates on which those devices are manufactured play a major role in achieving that(More)
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