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We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated(More)
A compact pin Ge photodetector is integrated in submicron SOI rib waveguide. The detector length is reduced down to 15 microm using butt coupling configuration which is sufficient to totally absorb light at the wavelength of 1.55 microm. A -3 dB bandwidth of 42 GHz has been measured at a 4V reverse bias with a responsivity as high as 1 A/W at the wavelength(More)
A first experimental demonstration of a planar superprism in silicon microphotonics technology using silicon on insulator (SOI) substrates is presented. Experimental results for anomalous wavelengthdependent angular dispersion in SOI triangular lattice planar photonic crystals are reported. An angular swing of 14 degrees is measured for light propagating(More)
We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize those MSM Ge photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 microm wavelength with a responsivity as high as 1 A/W.(More)
High efficiency surface grating couplers for silicon nitride waveguides have been designed, fabricated, and characterized. Coupling efficiencies exceeding 60 % are reported at a wavelength of 1.31 mum, as well as angular and wavelength -3 dB tolerances of 4 degrees and 50 nm, respectively. When the wavelength is increased from 1310 nm to 1450 nm the(More)
Experimental results for refractive index variation induced by depletion in a silicon structure integrated in a PIN diode are reported. Thermal effect has been dissociated from the electrical contribution due to carrier density variation induced by a reverse bias voltage. A figure of merit V(pi)L(pi) of 3.1 V.cm has been obtained at 1.55mum. Numerical(More)
Rib microwaveguides are demonstrated on silicon-on-insulator substrates with Si film thickness of either 380 or 200 nm and a width of 1 microm. Corner mirrors that allow compact 90 degrees turns between two perpendicular waveguides are characterized. Measured propagation losses are approximately 0.4 dB/cm and approximately 0.5 dB/cm for 380-nm and 200-nm Si(More)
40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the(More)
This paper addresses the problem of a photonic crystal (PhC) superprism design for coarse wavelength division multiplexing (CWDM) application. The proposed solution consists in using a PhC structure that presents an efficient balance between the wavelength dispersion and the beam divergence. It is shown that a bidimensional rhombohedral lattice PhC displays(More)
A high speed and low loss silicon optical modulator based on carrier depletion has been made using an original structure consisting of a p-doped slit embedded in the intrinsic region of a lateral pin diode. This design allows a good overlap between the optical mode and carrier density variations. Insertion loss of 5 dB has been measured with a contrast(More)