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As the minimum fabrication technology of CMOS transistor shrink down to 90nm or below, the high standby power has become one of the major critical issues for the SRAM-based FPGA circuit due to the increasing leakage currents in the configuration memory. The integration of MRAM in FPGA instead of SRAM is one of the most promising solutions to overcome this(More)
The development of hybrid magnetic-CMOS circuits such as MRAM (magnetic RAM) and magnetic logic circuit requires efficient simulation models for the magnetic devices. A macro-model of magnetic tunnel junction (MTJ) is presented in this paper. This device is the most commonly used magnetic components in CMOS circuits. This model is based on spin-transfer(More)
As one of the most promising Spintronics applications, MRAM combines the advantages of high writing and reading speed, limitless endurance and non-volatility. The integration of MRAM in FPGA allows the logic circuit to rapidly configure the algorithm, the routing and logic functions, easily realize the dynamical reconfiguration and multi-context(More)
In this paper, the paper propose a new non-volatile FPGA circuit based on spin-RAM technology (spin transfer torque magnetisation switching RAM), new generation of MRAM (magnetic RAM). This spin-RAM based FPGA circuit could process securely the information in low power dissipation and high speed; meanwhile all the data processed are stored permanently in(More)
The demonstration of NOT and OR logic gates using magnetic domain walls could suggest that digital circuit design methodology may apply directly to this new technology to build complex circuits. In this paper, the authors show that the use of an external rotating field which propagates domain walls of opposite magnetization at different times, reveals(More)
In this paper, the authors propose a non-volatile flip-flop, which presents simultaneously low power dissipation and high speed. This flip-flop is based on MRAM (magnetic RAM) technology on standard CMOS. In this non-volatile flip-flop design, the authors use magnetic tunnel junctions (MTJ) as storage element. Contrary to the complex sense amplifier circuit(More)
— The general purpose of spin-electronics is to take advantage of the spin of the electrons in addition to their electrical charge to conceive innovative electronic components. These components combine magnetic materials which are used as spin-polarizer or analyzer together with semiconductors or insulators. SPINTEC Laboratory works on the development of(More)
As one of the most promising Spintronics applications, MRAM combines the advantages of high writing and reading speed, limitless endurance, and nonvolatility. The integration of MRAM in FPGAs allows the logic circuit to rapidly configure the algorithm, the routing and logic functions, and easily realize the Runtime Reconfiguration (RTR) and multicontext(More)
SRAM is an indispensable component in modern microprocessors to store copies of the most frequently used data from the main memory. The high write/read speed of SRAM assures the desired memory throughput required by the internal high operating frequency of the microprocessor. However SRAM memory is volatile, which causes some drawbacks for computer systems(More)