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In this paper, we explore the use of multi-band radio frequency interconnect (or RF-I) with signal propagation at the speed of light to provide shortcuts in a many core network-on-chip (NoC) mesh topology. We investigate the costs associated with this technology, and examine the latency and bandwidth benefits that it can provide. Assuming a 400mm 2 die, we(More)
As chip multiprocessors scale to a greater number of processing cores, on-chip interconnection networks will experience dramatic increases in both bandwidth demand and power dissipation. Fortunately, promising gains can be realized via integration of Radio Frequency Interconnect (RF-I) through on-chip transmission lines with traditional interconnects(More)
In this paper, we propose a new way of implementing on-chip global interconnect that would meet stringent challenges of core-to-core communications in latency, data rate, and re-configurability for future chip-microprocessors (CMP) with efficient area and energy overheads. We discuss the limitation of traditional RC-limited interconnects and possible(More)
— A technique for generating multiple mm-wave carrier frequencies is introduced, using simultaneous sub-harmonic injection locking of multiple VCOs to a single reference frequency. A prototype of 30GHz and 50GHz sub-harmonic injection-locked VCOs is realized in a 90nm digital CMOS process and able to lock from 2 nd to 8 th harmonic of the reference(More)
— Digital control of the effective dielectric constant of a differential mode transmission line is shown up to 60GHz in standard CMOS technology. The effective dielectric constant is shown to increase from 5 to over 50 for the fixed artificial dielectric case. The digital controlled artificial dielectric transmission line (DiCAD) uses MOS switches to(More)
— A wideband 8.5 Gbps transmitter implemented using a 65 nm CMOS technology in V-band (50GHz – 75 GHz) is presented. A BPSK modulation scheme is used, realized by a double balanced Gilbert cell, followed by an output buffer and a matching network. Output power of 5.5 dBm – 7.2 dBm was achieved at carrier frequencies of 56GHz – 68 GHz. Limited by measurement(More)
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