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We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The(More)
Dopant atoms are used to control the properties of semiconductors in most electronic devices. Recent advances such as single-ion implantation have allowed the precise positioning of single dopants in semiconductors as well as the fabrication of single-atom transistors, representing steps forward in the realization of quantum circuits. However, the(More)
In analogy to the Coulomb and the Pauli spin blockade, based on the electrostatic repulsion and the Pauli exclusion principle respectively, the concept of valley blockade in Silicon nanostructures is explored. The valley parity operator is defined. Valley blockade is determined by the parity conservation of valley composition eigenvectors in quantum(More)
We present three monolithic metamaterial-based THz bandpass filters, the skewed circular slot rings, meandered slots and Jerusalem cross slots, to fit in the THz gap. These THz bandpass filters are comprised of a metal-dielectric-metal (MDM) structure that supports multiple resonances of electric dipole, magnetic dipole, and standing-wave-like modes. By(More)
Macroscopic manifestations of quantum mechanics are among the most spectacular effects of physics. In most of them, novel collective properties emerge from the quantum mechanical behaviour of their microscopic constituents. Others, like superconductivity, extend a property typical of the atomic scale to macroscopic length scale. Similarly, features of(More)
I review the advancements of atomic scale nanoelectronics towards quantum neuromorphics. First, I summarize the key properties of elementary combinations of few neurons, namely long– and short–term plasticity, spike-timing dependent plasticity (associative plasticity), quantumness and stochastic effects, and their potential computational employment. Next, I(More)
The fabrication of future nanoscale semiconductor devices calls for precise placement of dopant atoms into their crystal lattice. Monolayer doping combined with a conventional spike annealing method provides a bottom-up approach potentially viable for large scale production. While the diffusion of the dopant was demonstrated at the start of the method, more(More)
We propose a classical infrastructure for a quantum computer implemented in CMOS. The peculiarity of the approach is to operate the classical CMOS circuits and systems at deep-cryogenic temperatures (cryoCMOS), so as to ensure physical proximity to the quantum bits, thus reducing thermal gradients and increasing compactness. CryoCMOS technology leverages(More)