Eng Siew Kang

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
In this paper, the effects of several parameters on the threshold voltage of nanoscale dual-channel strained Si/Strained Si<sub>1-y</sub>Ge<sub>y</sub>/relaxed Si<sub>1-x</sub>Ge<sub>x</sub> PMOSFET are investigated using SILVACO TCAD tools. The aspects discussed include strain induced at the channel, channel length, oxide thickness and substrate doping(More)
The electronic band structure and carrier density of strained armchair graphene nanoribbons (AGNRs) with widths of n =3 m and n =3 m +1 were examined using tight-binding approximation. The current-voltage (I-V) model of uniaxial strained n =3 m AGNRs incorporating quantum confinement effects is also presented in this paper. The derivation originates from(More)
  • 1