Eng Keong Chua

Learn More
We present a novel selector made of doped-chalcogenide material. This selector not only achieves low holding voltage (0.2 V) and large on/off ratio (&gt;10<sup>7</sup>), but also exhibits the high on-current density (&gt;1.6 MA/cm<sup>2</sup>) and large hysteresis window (1.2 V). Besides, excellent selector performances with ultra-low off-state leakage(More)
In this work, tantalum oxide (TaOJ based ring contact Resistive Random Access Memory (RRAM) devices with varying TaO<sub>x</sub> thicknesses (5, 10 and 15 nm) were demonstrated and evaluated. TaO<sub>x</sub> layers were deposited using atomic layer deposition and were in contact with a Platinum (Pt) top electrode and Tantalum (Ta) sidewall electrode. RRAM(More)
Varying ZrO<sub>2</sub> doped GeTe phase change material of atomic percent greater than 10% were deposited and characterized. It was discovered that the crystallization of amorphous doped GeTe is suppressed by the incorporation of ZrO<sub>2</sub> at lower concentration but the crystallization improves as the concentration increases as depicted by the(More)
GeTe phase change material doped with 12 to 22 atomic percent TiO<sub>2</sub> were deposited and characterized. The crystallization of amorphous doped GeTe is inhibited by the incorporation of TiO<sub>2</sub> dopant up to 22 % as depicted by the increasing activation energy. However, only working devices fabricated using 12% of TiO<sub>2</sub> dopant with(More)
Of all the advantages exhibited by the RRAM devices, e.g. low power consumption, fast switching speed, and especially the good scalability are particularly striking for high density memory application. However, 3D RRAM still suffer from poor endurance especially during high speed operation which limits its extensive applications. Here, we report the(More)
  • 1