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Keywords: VCO BiCMOS Wideband VCO Accumulation MOS varactor RFIC SiGe a b s t r a c t In this paper, an integrated 2.2–5.7 GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mm SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together in the same(More)
This paper presents a 4-bit passive phase shifter for X-band (8-12 GHz) phased-arrays, implemented in 0.25-μm SiGe BiCMOS process. All bits are digitally controlled. The 22.5° and 45° bits are based on switched low-pass network while the 90° and 180° bits are based on switching between high-pass/low-pass filters. Filters(More)
This paper presents a 6-bit active phase shifter using a new vector-sum method for X-band (8-12 GHz) phased arrays in 0.13 μm SiGe BiCMOS process. An RC filter is used to generate two orthogonal vectors which are then fed into four VGAs, two using the common-base and two using the common-emitter topology. This generates 4 vectors of 0°,(More)
This paper presents a 4-bit digitally controlled phase shifter for X-band (8-12.5 GHz) phased-arrays, implemented in 0.25-μm SiGe BiCMOS process. Distributed active switches are utilized in first three bits. On-chip inductances are used to provide 22.5° phase shift steps. The placement and the geometry of these inductances are optimized for(More)
This paper presents an SPDT switch which is designed to operate at 8-12 GHz frequency range (X-Band), as a sub module of the front end circuit of a phased array radar. The switch distinguishes itself from its counterparts with its larger frequency range and higher isolation that is uniformly distributed over its bandwidth. It is fabricated using(More)
This paper presents design and measurement results of a high dynamic range (HDR) X-band (8-12 GHz) low noise amplifier (LNA) implemented in 130nm silicon-germanium (SiGe) BiCMOS process technology targeting phased array RADAR applications. A single-stage hetero-junction bipolar transistor (HBT) and inductively degenerated cascode topology is used in order(More)
This paper presents a fractional N frequency synthesizer which covers WLAN and WiMAX frequencies on a single chip. The synthesizer is fully integrated in 0.35µm BiCMOS AMS technology except crystal oscillator. The synthesizer operates at four frequency bands (3.101–3.352GHz, 3.379–3.727GHz, 3.7–4.2GHz, 4.5–5.321GHz) to(More)
This paper presents a Medium Power Amplifier (MPA) for X-Band Phased Array RADAR applications in 0.25μm SiGe technology. The MPA is designed such that it achieves high output power and low noise simultaneously that enables its use in Transmitter/Receiver (T/R) core module as a Low Noise Amplifier (LNA). The MPA achieves 23.6dB peak gain and 17.3dB(More)
I. INTRODUCTION Biosensors which have fast, direct and label-free responses make them attractive for biological applications. There are different kinds of detection mechanisms used for biosensors. Some detection mechanisms require quantification of proteins whereas in Interdigitated Electrode-based capacitors (IDC), labeling is not a requirement which also(More)
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