Emil-Mihai Pavelescu

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GaInNAs/GaAs quantum well (QW) structures and lasers are grown by molecular beam epitaxy (MBE) using a rf-plasma source. Nitrogen and indium out-diffusion in GaInNAs/GaAs quantum wells upon annealing are investigated. Optimal GaInNAs/GaAs QW structures have been designed and grown in order to achieve the emission wavelength beyond 1.30 μm. State-of-the-art(More)
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