Emeline Souchier

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In this work, we study the impact of Ag doping on GeS2-based CBRAM devices employing Ag as active electrode. Several devices with Ag doping varying between 10% and 24% are extensively analyzed. First, we assess switching voltages and time-to-set as a function of Ag concentration in the electrolyte layer. Subsequently, we evaluate data retention at different(More)
Conductive bridging random access memories (CBRAMs) are one of the most promising emerging technologies for the next generation of non-volatile memory. However, the lack of understanding of the switching mechanism at the nanoscale level prevents successful transfer to industry. In this paper, Ag/GeSx/W CBRAM devices are analyzed using depth selective X-ray(More)
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