Emanuele Rimini

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Recently, giant carrier mobility μ (>10(5) cm(2) V(-1) s(-1)) and micrometer electron mean free path (l) have been measured in suspended graphene or in graphene encapsulated between inert and ultraflat BN layers. Much lower μ values (10000-20000 cm(2) V(-1) s(-1)) are typically reported in graphene on common substrates (SiO(2), SiC) used for device(More)
A nanoscale investigation on the capacitive behavior of graphene deposited on a SiO2/n(+) Si substrate (with SiO2 thickness of 300 or 100 nm) was carried out by scanning capacitance spectroscopy (SCS). A bias V(g) composed by an AC signal and a slow DC voltage ramp was applied to the macroscopic n(+) Si backgate of the graphene/SiO(2)/Si capacitor, while a(More)
Phase Change Materials (PCMs) are unique compounds employed in non-volatile random access memory thanks to the rapid and reversible transformation between the amorphous and crystalline state that display large differences in electrical and optical properties. In addition to the amorphous-to-crystalline transition, experimental results on polycrystalline(More)
The thermal and electrical properties of phase change materials, mainly GeSbTe alloys, in the crystalline state strongly depend on their phase and on the associated degree of order. The switching of Ge atoms in superlattice structures with trigonal phase has been recently proposed to develop memories with reduced switching energy, in which two differently(More)
The phase transition from pure Ni to Ni<sub>2</sub>Si and NiSi was studied by in situ Transmission Electron Microscopy analyses from room temperature to 260degC. The reaction starts at 180degC with the formation of small Ni<sub>2</sub>Si transrotational domains. Their density and size increase by increasing the annealing temperature to 260degC. After 50(More)
In a system consisting of two different lattices, structural stability is ensured when an epitaxial relationship occurs between them and allows the system to retain the stress whilst avoiding the formation of a polycrystalline film. The phenomenon occurs if the film thickness does not exceed a critical value. Here we show that in spite of its orthorhombic(More)
In this Article, Stefania Privitera and Emanuele Rimini are incorrectly listed as being affiliated with This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the(More)
The formation of pseudoepitaxial transrotational structures has been observed during the early stage of the reaction of thin Ni layers on [001] Si substrates. During the reaction, large Ni(2)Si domains, characterized by single bending contours, establish a close relationship with the silicon lattice. The silicide domain consists of a core region, along the(More)
The morphology of gold nanoparticles (AuNPs) deposited on a (100) silicon wafer by simple immersion in a solution containing a metal salt and hydrofluoric acid (HF) is altered by HF treatment both before and after deposition. The gold clusters are characterized by the presence of flat regions and quasispherical particles consistent with the layer-by-layer(More)
In this article, a scanning probe method based on nanoscale capacitance measurements was used to investigate the lateral homogeneity of the electron mean free path both in pristine and ion-irradiated graphene. The local variations in the electronic transport properties were explained taking into account the scattering of electrons by charged impurities and(More)