Elodie Beche

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In this work we demonstrate for the first time 300 mm InGaAs on Insulator (InGaAs-OI) substrates. A 30 nm thick InGaAs layer was successfully transferred using low temperature Direct Wafer Bonding (DWB) and the Smart Cut<sup>TM</sup> technology. The epitaxial growing process has been optimized to reduce the surface roughness of the InGaAs film at around 1.5(More)
In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs) wafer on insulator (InGaAs-OI) substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low temperature direct wafer bonding (DWB) and Smart CutTM technology. Three key process steps of the integration were(More)
Elaboration of amorphous SiCPc: materials was performed using a conventional thermaly activated CVD at 100012003C from the '1MS-NH3-H2 system. 'I'he influence on the deposition rate and the composition was investigated using an experimental design by varq-ing: deposition temperature, pressure and hTb flow rate. A set of 16 samples SiCxNy with x!y ranged(More)
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