Elisabeth C Dickey

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Metal-doped diamond-like carbon films were produced for the purpose of an electrochemical nanoelectrode. In this study we use Z-contrast scanning transmission electron microscopy to directly observe metal cluster formation and distributions within the chromium-doped carbon films. At low doping ~;6 at. % Cr!, Cr is uniformly distributed within the C matrix;(More)
L. Grigorian,1,2 K. A. Williams,1 S. Fang,1,2 G. U. Sumanasekera,1 A. L. Loper,1 E. C. Dickey,3 S. J. Pennycook,4 and P. C. Eklund1,2 1Department of Physics and Astronomy, University of Kentucky, Lexington, Kentucky 40506 2Center for Applied Energy Research, University of Kentucky, 2540 Research Park Drive, Lexington, Kentucky 40511 3Department of Chemical(More)
Silicon nanowires will find applications in nanoscale electronics and optoelectronics both as active and passive components. Here, we demonstrate a low-temperature vapor–liquid–solid synthesis method that uses liquid-metal solvents with low solubility for silicon and other elemental semiconductor materials. This method eliminates the usual requirement of(More)
In the last few years, the scanning transmission electron microscope has become capable of forming electron probes of atomic dimensions. This makes possible the technique of Z-contrast imaging, a method of forming direct images at atomic resolution with high compositional sensitivity. Atomic column positions can be determined to high accuracy from the(More)
Structural defects formed on $111% planes of BaTiO3 during the degradation of high performance multilayer Ni–BaTiO3 X7R ceramic capacitors are studied using transmission electron microscopy and electron energy loss spectroscopy ~EELS!. Regular pseudocubic barium titanate grains are present in as-produced ~virginal! base-metal electrode capacitors. However,(More)
This work considers the equilibration kinetics of Nb-doped TiO2 single crystal (0.066 atom % Nb) during oxidation and reduction within a wide range of temperature (1073-1298 K) and oxygen activity (10(-14)-10(5) Pa). The associated semiconducting properties were determined using simultaneous measurements of both electrical conductivity and thermoelectric(More)
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