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— We present an original methodology to design hybrid neuron circuits (CMOS + non volatile resistive memory) with stochastic firing behaviour. In order to implement stochastic firing, we exploit unavoidable intrinsic variability occurring in emerging non-volatile resistive memory technologies. In particular, we use the variability on the 'time-to-set'(More)
— This paper presents a robust OxRAM-based non-volatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI. Non-volatility is added with minimal impact on the FF(More)