Elena Kohn

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  • Elena Kohn
  • 1979 International Electron Devices Meeting
  • 1979
Ti based multilayer contacts on n-GaAs have been tested in respect to their short time annealing characteristics up to 800 °C. While the annealing range for Ti-Mo-Au Schottky barrier (SB) contacts is restricted to below 550 °C, Ti in combination with W and with Au overlay was found to produce essentially unchanged diode characteristics up to(More)
Conjoining different semiconductor materials in a single nano-composite provides synthetic means for the development of novel optoelectronic materials offering a superior control over the spatial distribution of charge carriers across material interfaces. As this study demonstrates, a combination of donor-acceptor nanocrystal (NC) domains in a single(More)
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