Elena Bedel-Pereira

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We investigate the correlation between dopant activation and damage evolution in boron-implanted silicon under excimer laser irradiation. The dopant activation efficiency in the solid phase was measured under a wide range of irradiation conditions and simulated using coupled phase-field and kinetic Monte Carlo models. With the inclusion of dopant atoms, the(More)
The present work was dedicated to the development of a lab-on-chip device for water toxicity analysis and more particularly herbicide detection in water. It consists in a portable system for on-site detection composed of three-electrode electrochemical microcells, integrated on a fluidic platform constructed on a glass substrate. The final goal is to yield(More)
The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current–voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall(More)
In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off(More)
For the characterization of n-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the(More)
To study mobility limiting mechanisms in (0001) 4H-SiC, lateral n-channel MOSFETs in p-implanted wells on n-type epitaxial layers were manufactured and additionally selectively shallow implanted with different nitrogen (N) doses in the channel region. The mobility was found to be limited by Columbic scattering at low electric fields. Further surface(More)