Ehrenfried Zschech

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Incorporation of all important atom migration driving forces into the mass balance equation and its solution together with solution of the coupled electromagnetics, heat transfer, and elasticity problems allows one to simulate electromigration (EM)-induced degradation in a variety of dual-inlaid Cu interconnect segments characterized by different dominant(More)
We demonstrate full-field X-ray microscopy using crossed multilayer Laue lenses (MLL). Two partial MLLs are prepared out of a 48 μm high multilayer stack consisting of 2451 alternating zones of WSi2 and Si. They are assembled perpendicularly in series to obtain two-dimensional imaging. Experiments are done in a laboratory X-ray microscope using Cu-Kα(More)
The indentation modulus of thin films of porous organosilicate glass with a nominal porosity content of 30% and thicknesses of 350nm, 200nm, and 46nm is determined with help of atomic force acoustic microscopy (AFAM). This scanning probe microscopy based technique provides the highest possible depth resolution. The values of the indentation modulus obtained(More)
Performance and functionality of microelectronic devices have increased continuously by increasing transistor integration densities (" More Moore ") over more then four decades. However, today it has become questionable if this development alone will be able to overcome the predicted performance and cost issues as well as time to market for new product(More)
Managing the emerging internal mechanical stress in chips, particularly if they are 3D stacked, is a key task to maintain performance and reliability of microelectronic products. Hence, a strong need of a physics based simulation methodology emerges. This physics-based simulation, however, requires material parameters with high accuracy. A full-chip(More)
We have used the atomic force acoustic microscopy (AFAM) method to determine the indentation modulus of nanoporous thin-film materials with ultralow values of dielectric permittivity (dielectric constant k < 2.4). The AFAM method is based on the contact mode of atomic force microscopy (AFM) and as such is able to characterize materials with high spatial(More)
Valence EELS combined with STEM provides an approach to determine the dielectric constant of materials in the optical range of frequencies. The paper describes the experimental procedure and discusses the critical aspects of valence electron energy-loss spectroscopy (VEELS) treatment. In particular, the relativistic losses might affect strongly the results,(More)
Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate(More)
• By decreasing the accelerating voltage, the severe shrinkage in the OSG thin films can be dramatically reduced, and it can be even avoided by working with Ep 1 BLOCKINkV. • Working with a shorter value of working distance (WD 2 mm) is an essential requirement to image with low E p , in order to improve the resolution. • The energy selective(More)