Egas Henes Neto

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Soft errors can be efficiently detected using built in current sensors connected to the transistors bulk, monitoring currents caused by ionizations in the substrate. However, electrical parameter variations can compromise the functional operation of the sensor. The electrical parameter variations can arise from variations during the fabrication process of(More)
In this paper, we propose a new approach for using Built-in Current Sensor (BICS) to detect not only transient upsets in sequential logic but also in combinational circuits. In this approach, the BICS is connected in the design bulk to increase its sensitivity to detect any current discrepancy that may occur during a charged particle strike. In addition,(More)
The single event upset (SEU) mechanism in MOS circuits is normally investigated by Spice-like circuit simulation. The problem is that electrical simulation is time consuming and must be performed for each different circuit topology, incident particle and track.This work presents an accurate and computer efficient analytical model for the evaluation of(More)
An accurate and computer efficient analytical model for the evaluation of integrated circuit sensitivity to radiation induced single event transients is presented. The key idea of the work is to exploit a model that allows the rapid determination of the sensitivity of any MOS circuit to single event transients (SETs), without the need to run circuit level(More)
The paper presents a semi-passive UHF RFID tag chip developed to meet the restrictive requirements for Electronic Vehicle Identification application. The use of an external power supply allows the tag to achieve longer communication ranges even though additional features such as communication data encryption have been added. The system exploits(More)
Integrated circuits operating in space applications are susceptible to radiation effects that can be permanent or transient. 1 Various energetic particles in the space radiation environment can interact with silicon to cause undesirable effects. When a single heavy ion strikes silicon, it loses its energy by creating free electron-hole pairs, resulting in a(More)
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