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Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac(More)
Graphene nanoribbons will be essential components in future graphene nanoelectronics. However, in typical nanoribbons produced from lithographically patterned exfoliated graphene, the charge carriers travel only about ten nanometres between scattering events, resulting in minimum sheet resistances of about one kilohm per square. Here we show that(More)
Understanding the modification of the graphene's electronic structure upon doping is crucial for enlarging its potential applications. We present a study of nitrogen-doped graphene samples on SiC(000) combining angle-resolved photoelectron spectroscopy, scanning tunneling microscopy and spectroscopy and X-ray photoelectron spectroscopy (XPS). The comparison(More)
ACKNOWLEDGEMENTS I would first like to thank my advisor, Prof. Edward Conrad, for his mentorship, advice (both inside and outside of the lab) and, along with his wife, Dr. Leyla Conrad, for encouraging my professional development. Many professors discourage activities such as internships, but Ed was nothing but supportive. In all, I cannot imagine having(More)
iii ACKNOWLEDGEMENTS I want to offer the following people my sincerest appreciation and a heartfelt thank you! I did not arrive to the end of this program on my own. I would not have even begun on my own, but now I truly appreciate the experiences I have had. Foremost, Heather, who risked coming out here with me and was by my side this entire time. I can't(More)
We investigate a novel method of fabricating a network of graphene nanoribbon structures. The process is a sharp departure from conventional nanolithographic techniques in both method and amount of time required. Epitaxial graphene prepared on single crystal 4H-SiC(0001) was etched with O 2 plasma through 0.2 µm porous filters adhered to the surface of the(More)
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