Earl T. Gow

Learn More
considerations for MRAM T. M. Maffitt J. K. DeBrosse J. A. Gabric E. T. Gow M. C. Lamorey J. S. Parenteau D. R. Willmott M. A. Wood W. J. Gallagher MRAM (magnetic random access memory) technology, based on the use of magnetic tunnel junctions (MTJs) as memory elements, is a potentially fast nonvolatile memory technology with very high write endurance. This(More)
  • 1