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Statistics of successive breakdown events in gate oxides
The basic statistics for devices/circuits that can tolerate several breakdown (BD) events without failure are derived. All the presented results are analytical and do not rely on the validity of any…
Statistics of competing post-breakdown failure modes in ultrathin MOS devices
The statistical analysis of the time elapsed from first oxide breakdown to device failure (residual time) reveals that the distinction between hard breakdown (HBD) and soft breakdown (SBD) is…
Hydrogen-release mechanisms in the breakdown of thin SiO2 films.
TLDR
Analytical Cell-Based Model for the Breakdown Statistics of Multilayer Insulator Stacks
A fully analytical cell-based model is proposed to describe the breakdown (BD) statistics of multiple-layer insulator stacks. The model is shown to be completely equivalent to the full percolation…
Successive oxide breakdown statistics: correlation effects, reliability methodologies, and their limits
This paper deals with the statistics of successive oxide breakdown (BD) events in MOS devices. Correlation effects between these successive events are experimentally related to the statistics of BD…
A Compact Model for Oxide Breakdown Failure Distribution in Ultrathin Oxides Showing Progressive Breakdown
The cumulative distribution of the failure time, which includes the time to first breakdown (BD) and the progressive current growth time, is the function of interest for reliability of ultrathin gate…
Mechanisms of hydrogen release in the breakdown of SiO/sub 2/-based gate oxides
The mechanisms of hydrogen release (HR) involved in the degradation and breakdown (BD) of SiO2-based gate dielectrics are studied by means of the analysis of charge to breakdown (QBD ) data versus…
Failure-current based oxide reliability assessment methodology
A simple and robust reliability assessment methodology based on failure-current criteria is presented for ultra-thin gate oxides. This methodology only employs two parameters in the final failure…
From oxide breakdown to device failure: an overview of post-breakdown phenomena in ultrathin gate oxides
In this paper, we present an overview of post-BD phenomena in ultra thin (1nm < TOX < 3 nm) oxides and couple this description to a discussion of the different methodologies proposed to deal with the…
Edge effects in narrow track recording using symmetric and asymmetric write pole geometries
- E. Wu, J. V. Peske
- Physics
- 1 November 1994
At high track densities, the erase band can become a significant part of the written track. The large erase band associated with an asymmetric write pole geometry can reduce data track width and…
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