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Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology
Single-photon avalanche photodiodes (SPADs) operating in Geiger mode offer exceptional time resolution and optical sensitivity. Implementation in modern nanometer-scale complementaryExpand
A High-Performance Single-Photon Avalanche Diode in 130-nm CMOS Imaging Technology
A single-photon avalanche diode (SPAD) is reported in a 130-nm CMOS imaging process which achieves a peak photon detection efficiency (PDE) of ≈72% at 560 nm with >; 40% PDE from 410 to 760 nm. ThisExpand
A 3×3, 5µm pitch, 3-transistor single photon avalanche diode array with integrated 11V bias generation in 90nm CMOS technology
A 3×3 prototype image sensor array consisting of 2µm diameter CMOS avalanche photodiodes with 3-transistor NMOS pixel circuitry is integrated in a 90nm CMOS image sensor technology. The 5µm pixelExpand
A TCAD and Spectroscopy Study of Dark Count Mechanisms in Single-Photon Avalanche Diodes
It is shown through dark count rate spectroscopy (DCRS) and TCAD-simulations that in single-photon avalanche diodes (SPADs), the majority of low dark count rate (DCR) devices in modern CMOS arraysExpand
A Single-Photon Avalanche Diode in 90-nm CMOS Imaging Technology With 44% Photon Detection Efficiency at 690 nm
A CMOS and back-side illumination-compatible single-photon avalanche diode (SPAD) is reported in 90-nm imaging technology with a peak photon detection efficiency of ≈ 44% at 690 nm and better thanExpand
High fill factor digital Silicon Photomultiplier structures in 130nm CMOS imaging technology
This paper discusses recent progress in the realization of fully digital Silicon Photomultipliers (SiPMs) in an advanced 130nm CMOS imaging process. A dedicated electrical/optical crosstalkExpand
Single-Photon Avalanche Diode theory, simulation, and high performance CMOS integration
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A silicon photomultiplier with >30% detection efficiency from 450–750nm and 11.6μm pitch NMOS-only pixel with 21.6% fill factor in 130nm CMOS
A 16×16 Silicon Photomultiplier (SiPM) is reported in a 130nm CMOS imaging technology with a photon detection probability of >;30% from 450-750nm. The SiPM demonstrates a 21.6% fill factor with anExpand
An Infra-Red Sensitive, Low Noise, Single-Photon Avalanche Diode in 90nm CMOS
A Single-Photon Avalanche Diode (SPAD) is reported in 90nm CMOS imaging technology with a pea k photon detection efficiency (PDE) of ≈44% at 690nm and better than ≈20% at 850nm. This represents anExpand
A 1280 x 1080 4 . 2 μ m Split-diode Pixel HDR Sensor in 110 nm BSI CMOS Process
A triple exposure, high dynamic range (HDR), CMOS image sensor with an active array size of 1280 x 1080, and sub 1enoise floor is presented. This sensor is the first sensor that utilizes OmniVision’sExpand
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