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Giant Electroresistance in Ferroelectric Tunnel Junctions
The interplay between the electron transport in metal-ferroelectric-metal junctions with ultrathin ferroelectric barriers and the polarization state of a barrier is investigated. Using a model which
Surface magnetoelectric effect in ferromagnetic metal films.
A surface magnetoelectric effect is revealed by density-functional calculations that are applied to ferromagnetic Fe(001), Ni(001), and Co(0001) films in the presence of an external electric field.
Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale.
The obtained results show a change in resistance by about 2 orders of magnitude upon polarization reversal on a lateral scale of 20 nm at room temperature, promising for employing ferroelectric tunnel junctions in nonvolatile memory and logic devices.
Ferroelectric tunnel memristor.
A new type of memristor that is based on a ferroelectric tunnel junction, where the tunneling conductance can be tuned in an analogous manner by several orders of magnitude by both the amplitude and the duration of the applied voltage is demonstrated.
Electric field effect on magnetization at the Fe/MgO(001) interface
Density-functional calculations are performed to explore magnetoelectric effects originating from the influence of an external electric field on magnetic properties of the Fe/MgO(001) interface. It
Predicted magnetoelectric effect in Fe/BaTiO3 multilayers: ferroelectric control of magnetism.
A sizable difference in magnetic moments of Fe and Ti atoms at the two interfaces dissimilar by the orientation of the local electric dipole moments is shown.
Spin-dependent tunnelling in magnetic tunnel junctions
The phenomenon of electron tunnelling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its
Switchable induced polarization in LaAlO3/SrTiO3 heterostructures.
Using piezoresponse force microscopy, a switchable electromechanical response of the LAO overlayer is demonstrated, which is attributed to the motion of oxygen vacancies through the LAo layer thickness, a signature of a possible additional mechanism for nanoscale oxide 2DEG control on LAO/STO interfaces.
Prediction of electrically induced magnetic reconstruction at the manganite/ferroelectric interface
The control of magnetization via the application of an electric field, known as magnetoelectric coupling, is among the most fascinating and active research areas today. In addition to fundamental