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Raman shifts of CdSe quantum dots in glass matrices
Summary form only given. Recently, the vibrational states of quantum dots have been intensively studied as well as the optical properties due to carrier confinement. In this report, a modifiedExpand
Magnesium acceptor levels in GaN studied by photoluminescence
Magnesium doped GaN epitaxial layers were grown by metal-organic chemical vapor deposition on sapphire substrate. Energy levels of these acceptors were investigated by systematic photoluminescenceExpand
A compact extended-cavity diode laser with a Littman configuration
We have constructed a compact extended-cavity diode laser (ECDL) that is based on a Littman configuration with a grating and a reflector. Expand
Temperature-dependent photoluminescence study of C60 and C70
Abstract The photoluminescence (PL) spectra of C60 and C70 in toluene, as films on silicon and as KBr pellet, were obtained as a function of temperature. Different emission profiles are observedExpand
Stress relaxation in Si-doped GaN studied by Raman spectroscopy
We report the Si-doping-induced relaxation of residual stress in GaN epitaxial layers grown on (0001) sapphire substrate by the metalorganic vapor phase epitaxy technique. Micro-Raman spectroscopy isExpand
Surfactant-aided surface-enhanced Raman scattering of Zn(II), Co(II), Ni(II), Cu(II) and free-base tetrakis(4-sulphonatophenyl)porphyrins
Although surface-enhanced Raman scattering (SERS) has been recognized as a powerful tool for investigating the vibrational structure of molecules, the requirement that the molecules under studyExpand
Generation of a slow and continuous cesium atomic beam for an atomic clock
A thermal atomic beam from a cesium oven was slowed down by use of the Hoffnagle modified white-light cooling technique. In addition, the atomic beam was collimated by use of a two-dimensionalExpand
Many-body effects on modulation-doped InAs/GaAs quantum dots
The excitation intensity dependent photoluminescence spectra of various modulation-doped InAs/GaAs quantum dots exhibit the band filling and band-gap renormalization. From the time-resolvedExpand
Barrier-width dependence of quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells
We present the results of picosecond time-resolved photoluminescence (PL) measurements for a set of 30 A well GaN/AlxGa1−xN (x∼0.2) multiple-quantum-well (MQW) structures with varying barrier widthsExpand
Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N quantum wells
Abstract We have studied the effects of Si doping on the optical properties of In0.15Ga0.85N/In0.015Ga0.985N multiple quantum wells (MQWs) by photoluminescence (PL) and time-resolved PL measurements.Expand