E. R. Hsieh

  • Citations Per Year
Learn More
The impact of multi-level RTN on SRAM cells bas been experimentally demonstrated on both planar and trigate CMOS devices. First, to study multi-level RTN, a simple experimental method has been(More)
The variation of saturation drain current (I<sub>d,sat</sub>), induced by the random dopant variation (RDF), has been extensively studied by a new multivariate analysis method. It was found that the(More)