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Phase diagram and commensurate-incommensurate transitions in the phase field crystal model with an external pinning potential.
It is found that for small mismatch the transition is of first order, and it remains so for the largest values of mismatch studied here, which are consistent with results of simulations for atomistic models of adsorbed overlayers.
Energetics and atomic mechanisms of dislocation nucleation in strained epitaxial layers
We numerically study the energetics and atomic mechanisms of misfit dislocation nucleation and stress relaxation in a two-dimensional atomistic model of strained epitaxial layers on a substrate with
Current-voltage scaling of chiral and gauge-glass models of two-dimensional superconductors
The scaling behavior of the current-voltage characteristics of chiral and gauge glass models of disordered superconductors, are studied numerically, in two dimensions. For both models, the linear
Resistivity scaling and critical dynamics of fully frustrated Josephson-junction arrays with on-site dissipation
We study the scaling behavior and critical dynamics of the resistive transition in Josephson-junction arrays, at f=1/2 flux quantum per plaquette, by numerical simulation of an on-site dissipation
Phase transitions in a frustrated XY model with zig-zag couplings
We study a generalized version of the square-lattice frustrated XY model where unequal ferromagnetic and antiferromagnetic couplings are arranged in a zig-zag pattern. The ratio between the couplings
Patterning of heteroepitaxial overlayers from nano to micron scales.
A method for predicting the patterning of ultrathin films on micron length scales with atomic resolution is presented, making quantitative predictions for the type of superstructures (stripes, honeycomb, triangular) and length scale of pattern formation of two metal-metal systems, Cu on Ru(0001) and Cu on Pd(111).
Minimum energy paths for dislocation nucleation in strained epitaxial layers
We study numerically the minimum energy path and energy barriers for dislocation nucleation in a two-dimensional atomistic model of strained epitaxial layers on a substrate with lattice misfit.
Minimum energy path for the nucleation of misfit dislocations in Ge/Si(0 0 1) heteroepitaxy
A possible mechanism for the formation of a 90° misfit dislocation at the Ge/Si(0 0 1) interface through homogeneous nucleation is identified from atomic scale calculations where a minimum energy
Honeycomb and triangular domain wall networks in heteroepitaxial systems.
A comprehensive study for the influence of misfit strain, adhesion strength, and lattice symmetry on the complex Moiré patterns that form in ultrathin films of honeycomb symmetry adsorbed on compact triangular or honeycomb substrates shows a dramatic difference between the phase diagrams.