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The film thickness dependence of ferroelectric Si:HfO<sub>2</sub> (10 nm and 30 nm) was studied with a focus on ferroelectric field effect transistor (FeFET) memory applications based on a 28 nm bulk technology. Experimental P-E hysteresis of metal-ferroelectric-metal capacitor structures could be reproduced by a Preisach-based ferroelectric simulation(More)
Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si-doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and(More)
In this publication a formula is developed to describe the program level dependent charge loss of charge trapping memory cells. We demonstrate that the retention loss can be calculated using 5 parameters with an excellent agreement to the measured results. The increasing non-linearity of the retention loss for thicker nitride layers is evaluated using this(More)
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