E. Vilella

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Photodiodes are the simplest but most versatile semiconductor optoelectronic devices. They can be used for direct detection of light, of soft X and gamma rays, and of particles such as electrons or neutrons. For many years, the sensors of choice for most research and industrial applications needing photon counting or timing have been vacuum-based devices(More)
Three different pixels based on single-photon avalanche diodes for triggered applications, such as fluorescence lifetime measurements and high energy physics experiments, are presented. Each pixel consists of a 20 mm 100 mm (width length) single photon avalanche diode and a monolithically integrated readout circuit. The sensors are operated in the gated(More)
It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite gain and time accuracy in the picosecond range that can be used for single photon detection. However, their performance in particle detection still remains unexplored. In this contribution, we are going to expose different steps(More)
The silicon photomultiplier (SiPM) is a novel detector technology that has undergone a fast development in the last few years, owing to its single-photon resolution and ultra-fast response time. However, the typical high dark count rates of the sensor may prevent the detection of low intensity radiation fluxes. In this article, the time-gated operation with(More)
Point of care devices for the early diagnosis of current relavant diseases of our society require novel miniature and very effective devices. This contribution focuses on the description of behavioral models aimed to develop custom readout Application-Specific Integrated Circuits (ASICs) for the measurement of Fluorescence and Fluorescence life-time of(More)
Advances in SPAD arrays propose improving the fill factor by confining several SPADs in the same well, with a main issue related to crosstalk. For measurements triggered only in well-defined time periods that can be known in advance, the pixels can be inhibited before the arrival of the crosstalk charge. This paper reports the crosstalk characterization of(More)
The present article describes the design of a new low-voltage radiation-tolerant band gap reference circuit. The proposed circuit has been designed for biasing analog modules in the slow control of the Data Handling Processor for reading DEPFET sensors in the Super KEK-B particle accelerator in Japan. It has been implemented in a 90nm standard CMOS(More)
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