E. VanBesien

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Self aligned CuGeN barriers are used to improve the adhesion of Cu/SiC(N) interfaces at N45 technology. Eight times of electro-migration (EM) lifetime improvement has been demonstrated using thin CuGeN as a capping layer. Less than 5% metal lines Rs increase with a thin CuGeN capping layers were achieved at TSMC N45 node. CuGeN have more uniform films are(More)
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