E. S. Moskalenko

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Individual quantum dots have been studied by means of microphotoluminescence with dual-laser excitation. The additional infrared laser influences the dot charge configuration and increases the dot luminescence intensity. This is explained in terms of separate generation of excess electrons and holes into the dot from the two lasers. With increasing dot(More)
E. S. Moskalenko, V. Donchev, K. F. Karlsson, P. O. Holtz, B. Monemar, W. V. Schoenfeld, J. M. Garcia, and P. M. Petroff Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden A.F. Ioffe Physical-Technical Institute, RAS, 194021, Polytechnicheskaya 26, St. Petersburg, Russia Faculty of Physics, Sofia University,(More)
E. S. Moskalenko, K. F. Karlsson, P. O. Holtz, B. Monemar, W. V. Schoenfeld, J. M. Garcia, and P. M. Petroff Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden A. F. Ioffe Physical-Technical Institute, RAS, 194021, Polytechnicheskaya 26, St. Petersburg, Russia Materials Department, University of California,(More)
We study the low-temperature photoluminescence ~PL! from self-assembled InAs quantum dots as a function of a wide range of external parameters such as excitation power and pump-photon energy. By means of a conventional micro-PL setup we have succeeded in selecting the emission from a single ~isolated! quantum dot. The results obtained show dramatic changes(More)
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InAs/GaAs quantum dots have been subjected to a lateral external electric field in low-temperature microphotoluminescence measurements. It is demonstrated that the dot PL signal could be increased several times depending on the magnitude of the external field and the strength of the internal (built-in) electric field, which could be altered by an additional(More)
Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of an applied external magnetic field and/or the temperature, it is demonstrated that the charge state of a single quantum dot can be tuned. This tuning effect is shown to be related to the in-plane electron and hole transport, prior to capture into the quantum(More)