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We report on the observation of the Ising quantum Hall ferromagnet with Curie temperature T(C) as high as 2 K in a modulation-doped (Cd,Mn)Te heterostructure. In this system field-induced crossing of Landau levels occurs due to the giant spin-splitting effect. Magnetoresistance data, collected over a wide range of temperatures, magnetic fields, tilt angles,(More)
Sulphur passivation effects on the performance of LPE-grown GaSb/InGaAsSb/AlGaAsSb photodiodes designed for TPV applications have been monitored within the period of 3 years. The applicability of (NH<sub>4</sub>)<sub>2</sub>S, Na<sub>2</sub>S, and (NH<sub>2</sub>)<sub>2</sub>CS solutions have been compared by measuring of electro-optical characteristics(More)
Metallic layers and grids are a part of THz semiconductor devices and a detailed understanding of their properties is required. We carried out experimental and numerical studies of properties of Au layers and grids on GaAs surface. The results allow for a better modelling of devices and understanding their THz response.
We examine and identify magnetoresistance mechanisms in 2D system containing a sizable concentration of magnetic ions. We argue that some of these mechanisms can serve as a tool to measure spin polarization. Lack of spin degeneracy and enhanced localization make it possible to detect an additional QHE plateau associated with extended states floating-up in(More)
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