Learn More
A correlation study of middle-of-line (MOL) electrical test method with its inline polysilicon gate (PC) and the diffusion contacts (CA) photolithography overlay data is presented in this paper for wafers fabricated by gate first CMOS process at 32nm. The physical analysis by scanning electron microscopy (SEM) further confirmed the accuracy of the(More)
Wafer level Isothermal (ISOT) test is a highly accelerated test for interconnect electromigration (EM) evaluation, giving benefits of shorter test time and cost savings. Activation energy and physical failure modes of ISOT tests are determined for Copper (Cu) damascene lines. Comparisons are made with long term package level EM test in these aspects,(More)
  • 1