E. A. Meneses

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Recently cubic (c-) GaN/In x Ga 1-x N/GaN double heterostructures and quantum wells have been grown by MBE and MOCVD [1-3]. Contrary to their hexagonal counterparts, the cubic structures can be grown free from modulation due to spontaneous polarization and strain-induced piezoelectric fields. The spatial separation of the carriers wave function, induced by(More)
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