Duk Hyun Lee

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Graphene produced by exfoliation has not been able to provide an ideal graphene with performance comparable to that predicted by theory, and structural and/or electronic defects have been proposed as one cause of reduced performance. We report the observation of domains on exfoliated monolayer graphene that differ by their friction characteristics, as(More)
Embryonic stem (ES) cells can undergo continual proliferation and differentiation into cells of all somatic cell lineages in vitro; they are an unlimited cell source for regenerative medicine. However, techniques for maintaining undifferentiated ES cells are often inefficient and result in heterogeneous cell populations. Here, we determined effects of(More)
Monolayer graphene is one of the most interesting materials applicable to next-generation electronic devices due to its transport properties. However, realization of graphene devices requires suitable nanoscale lithography as well as a method to open a band gap in monolayer graphene. Nanoscale hydrogenation and oxidation are promising methods to open an(More)
Ripples in graphene monolayers deposited on SiO(2)/Si wafer substrates were recently shown to give rise to friction anisotropy. High friction appears when the AFM tip slides in a direction perpendicular to the ripple crests and low friction when parallel. The direction of the ripple crest is, however, hard to determine as it is not visible in topographic(More)
High-quality channel layer is required for next-generation flexible electronic devices. Graphene is a good candidate due to its high carrier mobility and unique ambipolar transport characteristics but typically shows a low on/off ratio caused by gapless band structure. Popularly investigated organic semiconductors, such as pentacene, suffer from poor(More)
Highly nonlinear bistable current-voltage (I-V) characteristics are necessary in order to realize high density resistive random access memory (ReRAM) devices that are compatible with cross-point stack structures. Up to now, such I-V characteristics have been achieved by introducing complex device structures consisting of selection elements (selectors) and(More)
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