Duanlin Que

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A series of silicon-rich oxide (SRO) and erbium-doped SRO (SROEr) films imbedded with structural tunable silicon nanoclusters (Si NCs) have been fabricated using sputtering followed by post-annealing. The coalescence of Si NCs is found in the films with large Si excess. The energy transfer rate between Si NCs and Er3+ is enhanced, but the luminescence(More)
The coupling between localized surface plasmons (LSPs) within silver nanostructures and excitons in a silicon-rich silicon nitride (SiNx) matrix has been demonstrated via the Purcell effect. A simple model is employed for the estimation of the Purcell factor as well as the average position of excitons within a luminescence matrix. The estimated average(More)
The energy transfer mechanism between luminescent centers (LCs) and Er3+ in erbium-doped silicon-rich oxide (SROEr) films prepared by electron beam evaporation is investigated. Intense photoluminescence of the LCs (weak oxygen bonds, neutral oxygen vacancies, and Si=O states) within the active matrixes is obtained. Fast energy transfer from Si=O states to(More)
The structural and optical properties of erbium-doped silicon-rich silica samples containing different Si concentrations are studied. Intense photoluminescence (PL) from luminescence centers (LCs) and silicon nanoclusters (Si NCs), which evolves with annealing temperatures, is obtained. By modulating the silicon concentrations in samples, the main(More)
The effect of the V-O complexes on oxygen precipitation in neutron-irradiated silicon has been investigated at low temperature in this paper. It is found that oxygen precipitation has been enhanced in neutron-irradiated silicon by prolonged annealing at 750/spl deg/C, which is based on denser precipitate nuclei. Furthermore, by Fourier transform infrared(More)
The internal gettering (IG) technology in Czochralski (CZ) silicon doped with different impurities (nitrogen, germanium and high concentration boron) have been investigated in the paper. It was found that the denuded zone (DZ) could be formed at the near-surface of the CZ silicon doped with these impurities by hi-lo-hi three-step annealing, even high(More)
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