Douglas Pence

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Side-gated bulk Si nMOSFETs with Si<sub>3</sub>N<sub>4</sub> shallow trench isolation (STI) have been previously demonstrated to have significantly reduced off-currents and improved subthreshold characteristics [1, 2]. The improvement is shown to be due to accumulation of the Si body with the holes as the polysilicon side-gate surrounding the body as a(More)
The authors previously reported wide-range threshold voltage (V<sub>T</sub>) control and improvement in subthreshold slope (SS) and drain induced barrier lowering (DIBL) in narrow bulk Si Accumulated Body MOSFETs [1-3]. The side-gate structure surrounding the MOSFET body is used for accumulating the body through an independent contact to provide these(More)
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