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Resonant tunneling diodes have been fabricated using strained-Si wells and strained Si0.4Ge0.6 barriers on a relaxed Si0.8Ge0.2 n-type substrate, which demonstrate negative differential resistance ...
Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect mobility are presented for nMOSFETs fabricated with strained-Si channels compared with identically… Continue Reading
The quantum cascade laser provides one potential method for the efficient generation of light from indirect materials such as silicon. While to date electroluminescence results from THz Si/SiGe… Continue Reading
Whilst most present day efforts towards the realisation of a silicon based laser are focused on the near-infrared (telecommunications) wavelengths, one of the most promising technical approaches is… Continue Reading
While electroluminescence has been demonstrated at terahertz frequencies from Si/SiGe quantum cascade emitters, to date no laser has been achieved due to poor vertical confinement of the optical… Continue Reading
An introduction to the methodology, design concepts, fabrication routes and potential applications is presented of research to fabricate quantum devices on a complementary metal oxide semiconductor… Continue Reading
In this paper, we demonstrated electroluminescence in strain-symmetrised structures with up to 600 active periods. The wafer also demonstrates for the first time growth of a strain symmetrised… Continue Reading
Characterisation of UHV-CVD (ultra high vacuum chemical vapour deposition) grown Si/SiGe heterostructure field-effect transistor (HFET) material with a buried, strained silicon layer has been carried… Continue Reading