Douglas Brisbin

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This document is made available in accordance with publisher policies and may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the URL above for details on accessing the published version. Copyright and all moral rights to the version of the paper(More)
We present the cross-identification and source photometry techniques used to process Herschel SPIRE imaging taken as part of the Herschel Multi-Tiered Extragalactic Survey (HerMES). Cross-identifications are performed in map-space so as to minimise source blending effects. We make use of a combination of linear inversion and model selection techniques to(More)
For PMOSFET devices NBTI is a serious reliability concern. Because of recovery effects careful stress and measurement methods must be used to determine threshold voltage degradation. These methods assume that mobility and subthreshold slope degradation are minimal. Recent papers have pointed out that this assumption may not be valid. This paper discusses(More)
Unique analog product application requirements such as high speed, low noise, low power, high precision and high voltage demand complex analog process technologies. This complexity poses several reliability challenges that are specific to each technology. In this paper some of the key reliability mechanisms in most common analog process technologies are(More)
Stability constants for the molecular complexes formed by protoporphyrin IX dimethyl ester and its metal chelates with Co2+, Ni2+, Cu2+, Zn2+, Mg2+ and Fe3+ with nitroarene acceptors are determined in non-aqueous solvents. The stability of the complexes is found to be largely insensitive to variations in the central metal ions provided they are in the same(More)
Plasma damage resulting from fluorine doped High Density Plasma Deposition (FHDP) was investigated. A dielectric barrier layer placed either directly under the FHDP or directly over the gate was found to protect the gate oxide from plasma damage. The mechanism by which the dielectric layers counteract plasma damage from upper dielectric layers is(More)
This document is made available in accordance with publisher policies and may differ from the published version or from the version of record. If you wish to cite this item you are advised to consult the publisher's version. Please see the URL above for details on accessing the published version. Copyright and all moral rights to the version of the paper(More)