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In this paper, we report a general and low-cost process to fabricate high mobility metal-oxide semiconductors that is suitable for thin-film electronics. This process use simple metal halide… Continue Reading
We demonstrate herein the fabrication of patterned layers of Zn2SiO4:Mn2+ and Y2SiO5:Eu3+ phosphor materials based on nanostructured diatom biosilicavia the inkjet printing process.
Thin-film transistors based on inkjet printed indium zinc tin oxide (IZTO) channel layers are reported in this paper. The printed IZTO transistor has a high field-effect mobility (µFE = ∼30 cm2V−1… Continue Reading
Chemical bath deposition (CBD) is an advantageous thin film deposition technique for depositing compound semiconductors at low temperature. In this paper, nickel oxide thin films were prepared by CBD… Continue Reading
Highly uniform thin-films of zinc-indium-tin oxide (ZITO) semiconductors were formed using solution process with wet-annealing at a low temperature of 250 °C. The solution-processed ZITO thin-film… Continue Reading
Chemical bath deposition CBD is a commonly used and inexpensive technique to deposit a variety of semiconductor and oxide thin films for a variety of different applications. In this work, a… Continue Reading
Interfacial reactions as a function of the stack structure of Al2O3 and HfO2 grown on Si by atomic-layer deposition were examined by various physical and electrical measurements. In the case of an… Continue Reading
Abstract Solution process-based inorganic indium–zinc–tin oxide semiconductor layer was applied to fabricate a thin film transistor (TFT) by annealing at 600 °C on plasma enhanced chemical vapor… Continue Reading