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In this paper, based on small signal models of hetero-junction bipolar transistors (HBTs) with different feedback circuits, the expressions for S parameters of the device are derived to analyze the influence of different feedback technologies on amplifier performance, especially on the stability and the gain flatness of Ultra-Wideband Low Noise(More)
In ord er to enhance the breakdown voltage of SiGe HBTs for high power application, the model of NPN SiGe HBT with superjunction collector is established with SILVACO TCAD. It is shown that the superjunction collector with iteratively vertical P layers and N layers will build up a lateral electric field to change the distribution of the electric field,(More)
—A low power cascode SiGe BiCMOS low noise amplifier (LNA) with current reuse and zero-pole cancellation is presented for ultra-wideband (UWB) application. The LNA is composed of cascode input stage and common emitter (CE) output stage with dual loop feedbacks. The novel cascode-CE current reuse topology replaces the traditional two stages topology so as to(More)
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