Dongyue Jin

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In ord er to enhance the breakdown voltage of SiGe HBTs for high power application, the model of NPN SiGe HBT with superjunction collector is established with SILVACO TCAD. It is shown that the superjunction collector with iteratively vertical P layers and N layers will build up a lateral electric field to change the distribution of the electric field,(More)
LNA with Current Reuse and Zero-Pole Cancellation Chunbao Ding, Wanrong Zhang, Dongyue Jin, Hongyun Xie, Pei Shen, Liang Chen, School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China Abstract—A low power cascode SiGe BiCMOS low noise amplifier (LNA) with current reuse and zero-pole cancellation is(More)
In order to enhance the breakdown voltage of the third-generation SiGe HBTs for microwave power application, a novel design methodology of HBTs with superjunction structure is presented. Both the superjunction structure location and the concentration is optimized step by step to compromise the breakdown voltage (BVCBO and BVCEO) and high frequency(More)
In this paper, based on small signal models of hetero-junction bipolar transistors (HBTs) with different feedback circuits, the expressions for S parameters of the device are derived to analyze the influence of different feedback technologies on amplifier performance, especially on the stability and the gain flatness of Ultra-Wideband Low Noise(More)
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