Dongsoo Jang

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Seoung-Hun Kang1
Chinkyo Kim1
Young-Kyun Kwon1
1Seoung-Hun Kang
1Chinkyo Kim
1Young-Kyun Kwon
1Cheol-Woon Kim
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Epitaxial lateral overgrowth in tandem with the first-principles calculation was employed to investigate the determining factor of a preferred orientation of GaN on SiO2-patterned m-plane sapphire substrates. We found that the (1100)-orientation is favored over the (1103)-orientation in the region with a small filling factor of SiO2, while the latter(More)
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