Dongming Guo

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This paper presents a new approach to structural topology optimization. We represent the structural boundary by a level set model that is embedded in a scalar function of a higher dimension. Such level set models are flexible in handling complex topological changes and are concise in describing the boundary shape of the structure. Furthermore, a wellfounded(More)
In this study, a novel approach of high speed scratching is carried out on silicon (Si) wafers at nanoscale depths of cut to investigate the fundamental mechanisms in wafering of solar cells. The scratching is conducted on a Si wafer of 150 mm diameter with an ultraprecision grinder at a speed of 8.4 to 15 m/s. Single-point diamonds of a tip radius of 174,(More)
The formation mechanism considers fivefold deformation twins originating from the grain boundaries in a nanocrystalline material, resulting in that fivefold deformation twins derived from a single crystal have not been reported by molecular dynamics simulations. In this study, fivefold deformation twins are observed in a single crystal of face-centered(More)
Deformation twinning evolution from a single crystal is conducted by molecular dynamics simulations, to elucidate a twinned face-centered-cubic alloy in an experiment with hardness up to 100 times as that of single crystals, and with ductility simultaneously. Critical twinning stress of cadmium zinc telluride (CdZnTe or CZT) calculated is 1.38 GPa. All the(More)
Nanoscale solely amorphous layer is achieved in silicon (Si) wafers, using a developed diamond wheel with ceria, which is confirmed by high resolution transmission electron microscopy (HRTEM). This is different from previous reports of ultraprecision grinding, nanoindentation and nanoscratch, in which an amorphous layer at the top, followed by a crystalline(More)
Variable feedrate interpolation algorithms for five-axis parametric toolpath are very promising but still rather limited currently. In this paper, an off-line feedrate scheduling method of dual NURBS curve is presented with geometric and kinematical constraints. For a given dual parametric curve, the feedrates of sampling points are first scheduled sequent(More)
A novel approach of chemical mechanical polishing (CMP) is developed for mercury cadmium telluride (HgCdTe or MCT) semiconductors. Firstly, fixed-abrasive lapping is used to machine the MCT wafers, and the lapping solution is deionized water. Secondly, the MCT wafers are polished using the developed CMP slurry. The CMP slurry consists of mainly SiO2(More)