Donghun Choi

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In summary, we successfully demonstrate the unpinning of the Fermi level in n-GaAs through the insertion of an ultrathin insulator to reduce the penetration of MIGS from the metal into the semiconductor. We are able to transform the current from rectifying Schottky behavior, to increased conduction, to tunneling limited, simply by increasing the SiN(More)
High mobility III–V compounds is a strong contender for extending high performance logic beyond the 22 nm technology node [1–3]. However, demonstrations of exceptional III–V performance required device footprints on the µm-scale despite nm-scale gate lengths, in order to avoid source/drain shorting during contact alloying. The(More)
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