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Indium oxide (InOx) films were deposited at low processing temperature (150 °C) by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (InCA-1) as the metal(More)
As a route to the production of organic-inorganic hybrid multilayers, the growth behavior of molecular layer deposited (MLD) alucone and atomic layer deposited (ALD) Al2O3 films on top of each other(More)