Dong-Keun Na

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We report on the effect of a p-type MgZnO electron blocking layer (EBL) on the electroluminescence from n-type ZnO/undoped ZnO/p-type ZnO light-emitting diodes (LEDs). The p-type Mg(0.1)Zn(0.9)O EBL was introduced between the undoped and p-type ZnO layers. The p-type Mg(0.1)Zn(0.9)O EBL increased the ultraviolet emission by 140% at 60 mA and decreased the(More)
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